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| DG417B/418B/419B New Product Vishay Siliconix Precision CMOS Analog Switches FEATURES D D D D D "15-V Analog Signal Range On-Resistance--rDS(on): 15 W Fast Switching Action--tON: 100 ns TTL and CMOS Compatible MSOP-8 and SOIC-8 Packaging BENEFITS D D D D D D Wide Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Reduced Board Space Improved Reliability APPLICATIONS D D D D D D D Precision Test Equipment Precision Instrumentation Battery Powered Systems Sample-and-Hold Circuits Military Radios Guidance and Control Systems Hard Disk Drives DESCRIPTION The DG417B/418B/419B monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417B series is ideally suited for portable and battery powered industrial and military applications requiring high performance and efficient use of board space. high voltage silicon gate (HVSG) process. Break-before-make is guaranteed for the DG419B, which is an SPDT configuration. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. To achieve high-voltage ratings and superior switching performance, the DG417B series is built on Vishay Siliconix's The DG417B and DG418B respond to opposite control logic levels as shown in the Truth Table. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417B Dual-In-Line, SOIC-8 and MSOP-8 S NC GND V+ 1 2 3 4 Top View 8 7 6 5 D V0 IN VL 1 ON OFF OFF ON TRUTH TABLE Logic DG417B DG418B Logic "0" = v 0.8 V, Logic "1" = w 2.4 V DG419B Dual-In-Line, SOIC-8 and MSOP-8 D S1 GND V+ 1 2 3 4 Top View 8 7 6 5 S2 VIN VL TRUTH TABLE DG419B Logic 0 1 SW1 ON OFF SW2 OFF ON Logic "0" = v 0.8 V, Logic "1" = w 2.4 V Document Number: 72107 S-31538--Rev. B, 11-Aug-03 www.vishay.com 1 DG417B/418B/419B Vishay Siliconix New Product ORDERING INFORMATION Temp Range DG417B/418B DG417BDJ 8-Pin 8 Pin Plastic MiniDIP DG418BDJ DG417BDY - 40 to 85_C 8-Pin 8 Pin Narrow SOIC DG418BDY DG417BDQ 8 Pin MSOP 8-Pin DG418BDQ DG417BAK, DG417BAK/883 - 55 to 125_C 8-Pin 8 Pin CerDIP DG418BAK, DG418BAK/883 Package Part Number DG419B 8-Pin Plastic MiniDIP - 40 to 85_C 8-Pin Narrow SOIC 8-Pin MSOP - 55 to 125_C 8-Pin CerDIP DG419BDJ DG419BDY DG419BDQ DG419BAK, DG419BAK/883 NOTE: SMD product is dual marked with /883 number. ABSOLUTE MAXIMUM RATINGS V - . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 20 V V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V - ) - 2 V to (V+) + 2 V or 30 mA, whichever occurs first Current, (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (S or D) Pulsed 1 ms, 10% duty cycle . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65 to 150_C Power Dissipation (Package)b 8-Pin Plastic MiniDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-Pin Narrow SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-Pin MSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW 400 mW 400 mW 600 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 5.3 mW/_C above 75_C d. Derate 4 mW/_C above 70_C e. Derate 8 mW/_C above 75_C SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL VVIN Level Shift/ Drive V+ GND D V- FIGURE 1. www.vishay.com 2 Document Number: 72107 S-31538--Rev. B, 11-Aug-03 DG417B/418B/419B New Product SPECIFICATIONSa Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current g ID( ff) D(off) V = 16 5 V V - = - 16.5 V 16 5 V+ 16.5 V, VD = #15.5 V VS = "15.5 V DG417B DG418B DG419B DG417B DG418B DG419B IS = - 10 mA, VD = "12.5 V V+ = 13.5 V, V - = - 13.5 V Full Room Full Room Full Room Full Room Full Room Full Room Full 15 - 0.1 - 0.1 - 0.1 - 0.4 - 0.4 - 0.25 - 20 - 0.25 - 20 - 0.75 - 60 - 0.4 - 40 - 0.75 - 60 - 15 15 25 34 0.25 20 0.25 20 0.75 60 0.4 40 0.75 60 - 0.25 -5 - 0.25 -5 - 0.75 - 12 - 0.4 - 10 - 0.75 - 12 - 15 15 25 29 0.25 5 0.25 5 0.75 12 0.4 10 0.75 12 nA V W Vishay Siliconix A Suffix - 55 to 125_C D Suffix - 40 to 85_C Symbol V+ = 15 V, V - = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Channel On Leakage Current ID( ) D(on) V+ = 16.5 V, V - = - 16.5 V VS = VD = "15.5 V Digital Control Input Current VIN Low Input Current VIN High IIL IIH Full Full - 0.5 - 0.5 0.5 0.5 - 0.5 - 0.5 0.5 0.5 mA Dynamic Characteristics Turn-On Time Turn-Off Time Transition Time Break-Before-Make Time Delay Charge Injection Off-Isolatione Channel-To-Channel Crosstalke Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF tTRANS tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz, VS = 0 V DG417B DG418B DG417B DG418B DG419B RL = 300 W , CL = 35 pF VS = "10 V See Switching Time Test Circuit RL = 300 W , CL = 35 pF VS1 = "10 V, VS2 = #10 V RL = 300 W , CL = 35 pF VS1 = VS2 = "10 V RL = 50 W, CL = 5 nF, f = 1 MHz DG419B DG417B DG418B DG417B DG418B DG419B DG419B Room Full Room Full Room Full Room Room Room Room Room Room Room Room 62 53 60 89 106 80 88 87 96 3 3 pC dB 89 99 80 86 87 93 ns 16 4 - 86 - 87 12 12 CL = 10 nF, Vgen = 0 V, Rgen = 0 W pF 50 57 f = 1 MHz, VS = 0 V Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current I+ IIL IGND V+ = 16 5 V V - = - 16 5 V 16.5 V, 16.5 VIN = 0 or 5 V Room Full Room Full Room Full Room Full 0.001 - 0.001 0.001 - 0.000 1 -1 -5 1 5 -1 -5 -1 -5 1 5 -1 -5 1 5 mA 1 5 Ground Current Document Number: 72107 S-31538--Rev. B, 11-Aug-03 www.vishay.com 3 DG417B/418B/419B Vishay Siliconix New Product SPECIFICATIONSa FOR UNIPOLAR SUPPLIES Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS = - 10 mA, VD = 3.8 V V+ = 10.8 V Full Room Full 26 0 12 35 52 0 12 35 45 V W A Suffix - 55 to 125_C D Suffix - 40 to 85_C Symbol V+ = 12 V, V - = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Transition Time Charge Injection tON tOFF tD tRANS Q RL = 300 W , CL = 35 pF, VS = 8 V See Switching Time Test Circuit RL = 300 W , CL = 35 pF Room Full Room Full Room Room Full Room 100 38 62 95 3 25 119 153 125 155 66 73 25 119 141 pC 125 143 66 69 ns DG419B RL = 300 W , CL = 35 pF VS1 = 0 V, 8 V, VS2 = 8 V, 0 V CL = 10 nF, Vgen = 0 V, Rgen = 0 W Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IIL IGND V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V Room Full Room Room Room 0.001 - 0.001 0.001 - 0.001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com 4 Document Number: 72107 S-31538--Rev. B, 11-Aug-03 DG417B/418B/419B New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. VD and Unipolar Supply Voltage 300 rDS(on) - Drain-Source On-Resistance (W) rDS(on) - Drain-Source On-Resistance (W) TA = 25_C VL = 5 V Vishay Siliconix On-Resistance vs. VD and Dual Supply Voltage 40 TA = 25_C 35 30 25 "8V 20 15 10 5 - 20 " 10 V " 12 V " 15 V "5V 250 200 V+ = 3.0 V VL = 3 V V+ = 12.0 V V+ = 5.0 V 50 V+ = 8.0 V V+ = 15.0 V V+ = 20.0 V 150 100 " 20 V - 15 - 10 -5 0 5 10 15 20 0 0 4 8 12 16 20 VD - Drain Voltage (V) VD - Drain Voltage (V) rDS(on) - Drain-Source On-Resistance (W) 30 On-Resistance vs. VD and Temperature rDS(on) - Drain-Source On-Resistance (W) V" = "15 V VL = 5 V 50 45 40 35 30 25 On-Resistance vs. VD and Temperature 25 125_C 85_C 25_C - 55_C 20 125_C 85_C 15 25_C - 55_C 20 15 10 5 V+ = 12 V v- = 0 V VL = 5 V 0 2 4 6 8 10 12 10 5 - 15 - 10 -5 0 5 10 15 VD - Drain Voltage (V) VD - Drain Voltage (V) Leakage vs. Analog Voltage 100 80 60 40 ID, IS (pA) 20 0 - 20 - 40 - 60 - 80 - 100 - 15 IS(off) ID(off) ID(on) V" = "15 V VL = 5 V TA = 25_C 100 m 10 m I+ - Supply Current (nA) 1m 100 m 10 m 1m 100 n 10 n 1n - 10 -5 0 5 10 15 Supply Current vs. Input Switching Frequency V" = "15 V VL = 5 V I+, I - IL 1 00 p 10 100 1K 10 K 100 K 1M 10 M VD or VS - Drain or Source Voltage (V) Document Number: 72107 S-31538--Rev. B, 11-Aug-03 Input Switching Frequency (Hz) www.vishay.com 5 DG417B/418B/419B Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature 140 VL = 5 V 120 80 tON V = 12 V 100 t ON , t OFF (ns) t ON , t OFF (ns) 70 60 50 40 30 20 - 55 tTRANS tTRANS+ Transition Time vs. Temperature 100 90 V" = "15 V VL = 5 V 80 tON V = "15 V 60 tOFF V = "15 V tOFF V = 12 V 40 20 - 55 - 35 - 15 5 25 45 65 85 105 125 - 35 - 15 5 25 45 65 85 105 125 Temperature (_C) Temperature (_C) Transition Time vs. Temperature 140 V+ = 12 V v- = 0 V VL = 5 V Loss, OIRR, X TALK (dB) tTRANS 10 - 10 Insertion Loss, Off -Isolation Crosstalk vs. Frequency 120 Loss t ON , t OFF (ns) 100 - 30 XTALK OIRR 80 tTRANS+ 60 - 50 - 70 V+ = 3 V V- = 0 V RL = 50 W 40 - 90 20 - 55 - 110 - 35 - 15 5 25 45 65 85 105 125 100 k 1M 10 M Frequency (Hz) 100 M 1G Temperature (_C) Switching Threshold vs. Supply Voltage 3.0 VL = 5 V Charge Injection vs. Analog Voltage 30 25 C = 10 nF 2.5 VT - Switching Threshold (V) Q - Charge Injection (pC) 20 15 10 5 0 -5 - 10 - 15 2.0 V = "15 V 1.5 V+ = 12 V 1.0 0.5 - 20 - 25 0.0 4 6 8 10 12 14 16 18 20 V+ - Supply Voltage (V) - 30 - 15 - 12 -9 -6 -3 0 3 6 9 12 15 VS - Analog Voltage (V) Document Number: 72107 S-31538--Rev. B, 11-Aug-03 www.vishay.com 6 DG417B/418B/419B New Product TEST CIRCUITS VO is the steady state output with the switch on. +5 V +15 V Logic Input VL "10 V S IN GND VRL 300 W CL 35 pF V+ D 0V VO Switch Input VS VO 90% tOFF 3V 50% Vishay Siliconix tr <5 ns tf <5 ns - 15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Switch Output 0V tON Note: Logic input waveform is inverted for switches that have the opposite logic sense. FIGURE 2. Switching Time (DG417B/418B) +5 V +15 V Logic Input 3V 0V D VO RL 300 W CL 35 pF VS1 = VS2 VO Switch Output CL (includes fixture and stray capacitance) - 15 V 0V tD tD tr <5 ns tf <5 ns VL VS1 VS2 S1 S2 V+ 90% IN GND V- FIGURE 3. Break-Before-Make (DG419B) +5 V VL VS1 VS2 S1 S2 IN GND VV+ +15 V 3V 50% 0V tTRANS VS1 V01 Switch Output VS2 V02 10% 90% tTRANS tr <5 ns tf <5 ns D VO RL 300 W CL 35 pF Logic Input - 15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) FIGURE 4. Transition Time (DG419B) Document Number: 72107 S-31538--Rev. B, 11-Aug-03 www.vishay.com 7 DG417B/418B/419B Vishay Siliconix TEST CIRCUITS +5 V +15 V DVO VO VO CL 10 nF VINX OFF ON OFF New Product Rg VL S IN V+ D 3V GND Q = DVO x CL - 15 V FIGURE 5. Charge Injection +5 V C VL VS Rg = 50 W S1 +15 V C +5 V V+ D C VL 50 W VS Rg = 50 W 0V, 2.4 V VC IN RL S V+ +15 V C D VO VO S2 RL 0.8 V IN GND GND V- C - 15 V XTALK Isolation = 20 log C = RF bypass VO VS - 15 V VO VS Off Isolation = 20 log FIGURE 6. Crosstalk (DG419B) FIGURE 7. Off Isolation +5 V C VL VS Rg = 50 W 0V, 2.4 V IN GND S +15 V C V+ D VO RL V- C - 15 V FIGURE 8. Insertion Loss www.vishay.com 8 Document Number: 72107 S-31538--Rev. B, 11-Aug-03 DG417B/418B/419B New Product TEST CIRCUITS +5 V C VL V+ Vishay Siliconix +15 V +15 V C C NC DG417B/418B S Meter V+ S2 S1 Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz DG419B 0 V, 2.4 V IN 0 V, 2.4 V IN D GND VC HP4192A Impedance Analyzer or Equivalent f = 1 MHz D2 GND V- D1 C - 15 V - 15 V FIGURE 9. Source/Drain Capacitances Document Number: 72107 S-31538--Rev. B, 11-Aug-03 www.vishay.com 9 |
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